陈琨

电子与信息工程学院副教授。2013年在香港中文大学获得电子工程学博士学位,随后成为香港中文大学电子工程学系博士后。2017年3月加入中山大学电子与信息工程学院,广东省显示材料重点实验室。主要从事新型二维半导体材料生长与相关微纳电子,光电子器件研究。包括二维柔性电子器件,可穿戴电子与类神经网络器件,红外及太赫兹波段光电探测器等。

联系方式

[email protected]

教育经历

2009.8 – 2013.5 香港中文大学电子工程学博士

2005.9 – 2008.6 华南师范大学微电子学与固体电子学硕士

2001.9 – 2005.7 华中科技大学信息与计算科学/光信息科学与技术学士

授课课程

本科生课程:

线性代数

数学物理方法

研究生课程:

纳米光子学

研究方向

1. 二维微纳电子器件:柔性电子器件,可穿戴电子器件与类神经网络器件

2. 二维光电探测器件:中远红外及太赫兹波段

3. 二维材料生长,

4. 生长机理与电学性能第一性原理计算

招生/招聘方向:电子科学与技术(微电子学与固体电子学),集成电路,电子与通信工程

招收硕士,博士,博士后。

欢迎微电子,光电子,应用物理,材料物理,化学等背景的同学报考。

科研项目

中山大学百人计划引进人才启动人才,30万,2017年3月— 2020年2月,主持。

国家自然科学基金青年项目,25万,2019年1月— 2021年12月,主持。

广东省杰出青年项目,100万,2018年5月— 2022年4月,主持。

广州市科技计划一般项目,20万,2019年4月— 2023年3月,主持。

代表性科研成果 

  1. Wan, X.#*; Chen, E.#; Yao, J.; Gao, M.; Miao, X.; Wang, S.; Gu, Y.; Xiao, S.; Zhan, R.; Chen, K.*; Chen, Z.; Zeng, X.; Gu, X.; Xu, J. Synthesis and Characterization of Metallic Janus MoSH Monolayer. ACS Nano 2021, 15 (12), 20319-20331.(IF:15.881)
  2. Chen, K.#*; Deng, S.#; Chen, E.; Wen, S.; Ouyang, T.; Wang, X.*; Zhan, R.; Cai, J.; Wan, X.; Chen, H. Optimization Strategies for High Photoluminescence Quantum Yield of Monolayer Chemical Vapor Deposition Transition Metal Dichalcogenides. ACS Appl Mater Interfaces 2021, 13 (37), 44814-44823. (IF:9.229)
  3. Tao, L.*; Li, Z.; Chen, K.*; Zhou, Y.; Li, H.; Wang, X.; Zhan, R.; Hou, X.; Zhao, Y.; Xu, J.; Qiu, T.; Wan, X.; Xu, J.-B*. A Spontaneously Formed Plasmonic-Mote2 Hybrid Platform for Ultrasensitive Raman Enhancement. Cell Reports Physical Science 2021, 2 (8), 100526.
  4. Deng, S.; Gu, Y.; Wan, X.; Gao, M.; Xu, S.; Chen, K.*; Chen, H.*, Probing Electronic Properties of Cvd Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope. Frontiers in Materials, 2021, 8 (299), 735344.
  5. X. Wan*, X. Miao, J. Yao, S. Wang, F. Shao, S. Xiao, R. Zhan, K. Chen*, X. Zeng, X. Gu, J. Xu*, In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors.  Advanced Materials, 2021, 33, 2100260 (IF:30.849)
  6. Wan, X. #*; Li, H.#Chen, K.*; and Xu, J.*, Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures. Chem. Res. Chinese Universities , 2020, 36(4), 525-550 
  7. Tao, L.#Chen, K.#*; Chen, Z.#; Cong, C.; Qiu, C.; Chen, J.; Wang, X.; Chen, H.; Yu, T.; Xie, W.; Deng, S.; Xu, J.*,1T' transition metal telluride atomic layers for plasmon-free SERS at femtomolar levels. J. Am. Chem. Soc. 2018, 140 (28), 8696-8704 (IF:14.357)
  8. Chen, K.#*; Chen, Z. #; Wan, X.; Zheng, Z.; Xie, F.; Chen, W.; Gui, X.; Chen, H.; Xie, W.; Xu, J.*, A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties. Advanced Materials 2017, 29 (38), 1700704. (IF:27.398)
  9. Chen, K. #; Wan, X. #; Xu, J. B.*, Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions. Advanced Functional Materials 2017, 27 (19), 1603884. (IF:13.325)
  10. Wan, X.#Chen, K. #*; Chen, Z. F.; Xie, F. Y.; Zeng, X. L.; Xie, W. G.; Chen, J.; Xu, J. B.*, Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors. Advanced Functional Materials 2017, 27 (19), 1603998. (IF:13.325)
  11. X. Wan#K. Chen#, W. Xie, J. Wen, H. Chen, J. B. Xu*, Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering. Small 2016, 12, 438-445. (IF:9.598)
  12. K. Chen#, X. Wan#, W. Xie, J. Wen, Z. Kang, X. Zeng, H. Chen, J. Xu*, Lateral Built-In Potential of Monolayer MoS2–WS2 In-Plane Heterostructures by a Shortcut Growth Strategy. Advanced Materials  2015, 27, 6431-6437. (IF:21.950)
  13. K. Chen#, X. Wan#, J. Wen, W. Xie, Z. Kang, X. Zeng, H. Chen, J. B. Xu*, Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy. Acs Nano 2015, 9, 9868-9876. (IF:13.709)
  14. X. Wan#, K. Chen#, J. Xu*, Interface Engineering for CVD Graphene: Current Status and Progress. Small 2014, 10, 4443-4454. (IF:9.598)
  15. K. Chen#, X. Wan#, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao, J. Xu*, Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature.  Nanoscale 2013, 5, 5784-5793.
  16. K. Chen#, X. Wan#, J. B. Xu*, Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure. Journal of Materials Chemistry C  2013, 1, 4869-4878.
  17. K. Chen, X. Wang, J.-B. Xu*, L. Pan, X. Wang and Y. Shi, Electronic Properties of Graphene Altered by Substrate Surface Chemistry and Externally Applied Electric Field. The Journal of Physical Chemistry C, 2012, 116, 6259–6267.
  18. X. Wan#K. Chen#, D. Q. Liu, J. Chen, Q. Miao, J. B. Xu*, High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons. Chemistry of Materials 2012, 24, 3906-3915.(IF:9.890)
  19. K. Chen, G.H. Fan*, Y. Zhang, S.F. Ding, First-Principle Calculation of Nitrogen-Doped p-Type ZnO. Acta Physico-Chimica Sinica 2008,24, 61-66.
  20. K. Chen, G.H. Fan*, Y. Zhang, First principles study of optical properties of wurtzite ZnO with Mn-doping.  Acta Physica Sinica 2008, 57, 1054-1060.
  21. K. Chen, G.H. Fan*, Y. Zhang, S.F. Ding, First principles study of In-N codoped ZnOActa Physica Sinica 2008, 57, 3138-3147.
  22. Chen, Z.; Chen, X.; Tao, L.; Chen, K.; Long, M.; Liu, X.; Yan, K.; Stantchev, R. I.; Pickwell-MacPherson, E.; Xu, J. B., Graphene controlled Brewster angle device for ultra broadband terahertz modulation. Nature Communications 2018, 9 (1), 4909.
  23. L. Tao, Chen K., Z. Chen, W. Chen, X. Gui, H. Chen, X. Li, J.B. Xu*, Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries , ACS Applied Materials & Interfaces, 9 (13), 2017, 12073-12081.
  24. X. Wan, K. Chen, J. Du, D. Q. Liu, J. Chen, X. Lai, W. G. Xie, J. B. Xu*, Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large Areas. The Journal of Physical Chemistry C 2013, 117, 4800-4807.
  25. Z. Kang, H. Lu, J. Chen, K. Chen, F. Xu, H. P. Ho*, Plasmonic graded nano-disks as nano-optical conveyor belt. Optics Express 2014, 22, 19567-19572.
  26. Z. Kang, J. Chen, S. Y. Wu, K. Chen, S. K. Kong, K. T. Yong, H. P. Ho*, Trapping and assembling of particles and live cells on large-scale random gold nano-island substrates. Scientific Reports 2015, 5, 9978.
  27. S.F. Ding, G.H. Fan*, S.T.Li, K. Chen, B. Xiao, Theoretical study of BexZn1-xO alloys. Physica B 2007, 394,127-131.