金运姜，中山大学“百人计划”副教授，博士生导师

办公室：中大东校区纳米楼301室

邮箱：   [email protected]

教育经历

2017.12—至今              中山大学电子与信息工程学院                               副教授                               

2012—2017                  新加坡科技局材料工程研究所(A*star, IMRE)         研究员

2008—2012                  新加坡南洋理工大学                                             博士                

2004—2007                  中国科学技术大学                                                硕士               

研究方向

新型半导体材料和器件

纳米光子学和纳米电子学

低维(纳米、二维)材料和器件

新功能材料制备及应用

科研项目

1. TiO₂表面处理可见光催化性能的提升及其在自 洁净玻璃中的应用，新加坡材料工程研究所(IMRE)项目。
2. 碳纳米管对耐磨陶瓷薄膜性能的提升，新加坡材料工程研究所项目。
3. III-V/Si的合成及其在存储器器上的应用，新加坡材料工程研究所项目。

课题组招收硕士/博士研究生, 欢迎具有相关专业背景的学生报考。

代表性科研成果

1. 1. H. F. Liu, Y. J. Jin, M. Lin, S. F. Guo, S. Tripathy and X. Z. Wang, Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures, J. Mater. Chem. C., 6 (2018) 13059. (Co-first author)

2. Y. J. Jin, J. J. Linghu, J. W. Chai, C. S. Chua, L. M. Wong, Y. P. Feng; M. Yang, S. J. Wang, Defect Evolution Enhanced Visible-Light Photocatalytic Activity in Nitrogen-Doped Anatase TiO2, The Journal of Physical Chemistry C, 2 (2018) 16600-16606.

3. H. F. Liu, J. J. Lee, Y. J. Jin, J. Yang, C. Y. Yang, D. Z. Chi, Huge Absorption Edge Blue shifts of Layered α-MoO₃ Crystals upon Thickness Reduction Approaching 2D Nanosheets, The Journal of Physical Chemistry C, 122  (2018) 12122–12130.

4. Y. J. Jin, D. H. Zhang, C. Ke, X. H. Tang, Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition, Journal of Alloys and Compounds, 756 (2018) 134-138.

5. H. F. Liu, Y. J. Jin, MOCVD Ge-on-GaAs and Its p-Type Doping via Incorporating Ga Atoms, Procedia Engineering, Procedia Engineering, 2017 215: 17–23. (Equal contribution)

6. Y. J. Jin*, X. H. Tang, H. F. Liu, C. Ke, D. H. Zhang*, “Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD", Journal of Alloys and Compounds, 721 (2017) 628-632.

7. Y. J. Jin*, D. H. Zhang, H. F. Liu, X. H. Tang*, “Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD”, Materials Letters, 185 (2016) 77-80.

8. Y. J. Jin*, D. H. Zhang*, X. H. Tang, J. H. Teng, “InSbN alloys Grown on GaSb by Metal-organic chemical vapor deposition for long wavelength detection”, Thin Solid Films, 616 (2016) 624-627.

9. Y. J. Jin, C. K. Chia, L. M. Wong, H. F. Liu, J. W. Chai, D. Z. Chi and S. J. Wang*, “P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD”,  Applied Surface Science, 376 (2016) 236-240.

10. Y. J. Jin*, Z. Xu, S. F. Yoon, C. K. Chia, S. J. Wang and D. Z. Chi, “Switching characteristics of TaOx-based One Diode-One Resistor for Crossbar Memory Application”, Electronic Material Letter, 12 (2016) 365-370.

11. Y. F. Lao, A. G. Unil Perera, H. L. Wang, J. H. Zhao, Y. J. Jin and D. H. Zhang, "Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors", J. Appl. Phys., 119 (2016) 105304.

12. H. F. Liu, Y. J. Jin, C. Y. Yang, “Droplets induced dot, dot-in-hole, and hole structures in GaGe thin films grown by MOCVD on GaAs substrates”, CrystEngComm, 18 (2016) 4499-4507. (Equal contribution).

13. H. F. Liu, Y. J. Jin, C. G. Li, S. B. Dolmanan, S. F. Guo, S. Tripathy, and C. C. Tan, “High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD”, RCS Advances, 6 (2016) 52725. (Equal contribution)

14. Y. J. Jin, X. H. Tang, J. H. Teng, D. H. Zhang, “Optical properties and bonding behaviors of InSbN alloys grown by metalorganic chemical vapor deposition”, Journal of Crystal Growth, 406 (2015) 12-16.
15. X. Z. Chen, Y. J. Jin, and D. H. Zhang, “Dilute antimonide nitride for long wavelength infrared photodetection”, AIP Conference Proceedings, 1598 (2014) 166.
16. C. K. Chia, A. Iskander, Y. B. Chen, Y. J. Jin, G. K. Dalapati, “Ge and GaAs integration for device applications”, Silicon-Germanium technology and device meeting (ISTDM), 87-88, 2014.
17. X.Z. Chen, D. H. Zhang, Y. J. Jin, J. H. Li, J. H. Teng, “Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys”, Journal of Crystal Growth, 362 (2013) 197–201.  
18. Y. Wang, D. H. Zhang, X. Z. Chen, Y. J. Jin, “Bonding and diffusion of nitrogen in the InSbN alloys formed by two-step ion implantation”, Applied physcis letter, 101 (2012) 021905.
19. Y. J. Jin, D. H. Zhang, X. Z. Chen, X. H. Tang,“Sb antisite defects in InSb epilayers prepared by metal-organic chemical vapor deposition”, Journal of Crystal Growth, 318 (2011) 356-359.
20. Y. J. Jin, X. H. Tang, X. Z. Chen, D. H. Zhang, “Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition”, 2010 IEEE Photonics Global Conference, page 1-4, PGC (2010).

21. Y. J. Jin, Y. Wang, D. H. Zhang, X. H. Tang, B. L. Zhang, “Epitaxial growth of high quality InSb1-xNx by MOCVD”, 2008 IEEE Photonics Global @Singapore (IPGC), page1-4, PGC (2008).
22. Y. J. Jin, Q. X. Yu, S. J. Liu, Y. Liao, “Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film”, Chinese Journal of Quantum Electronics, 2008, 25(1): 43-48 (in Chinese)

专利

1.   Y. J. Jin, J. W. Chai, Y. L. Hou, S. J. Wang, Increasing Solar Absorption for Photocatalysis by High dose N-doped TiO₂”, Singapore IPOS 201655, Singapore.