张佰君
中山大学电子与信息工程学院 教授，博士生导师。1997年12月毕业于吉林大学电子工程学院,并获理学博士学位。2000年5月于中国科学院半导体研究所博士后出站；2000年5月-2002年5月，日本名古屋工业大学JSPS特别研究员（日本学术振兴会（JSPS）资助）；2006年9月回国，入选中山大学百人计划教授。近年来，一直从事宽禁带GaN基半导体材料生长及器件方面的研究。
联系方式：020-39336462
电子邮箱：[email protected]
学术兼职和社会服务
1、《功能材料》编辑委员会委员
2、《半导体光电》编辑委员会委员
教育经历
1994.9-1997.12 吉林大学 半导体物理与器件，博士
1991.9-1994.07 吉林大学 半导体物理与器件，硕士
1987.9-1991.07 吉林大学 半导体物理，本科
授课课程
本科生课程：1、半导体光电子器件；2、半导体光电材料与器件；3、光电器件制造工程技术
研究生课程：1、新型半导体发光器件；2、半导体光电器件基础；3、半导体微纳光电子器件及工艺技术
研究方向
1、宽禁带GaN基半导体发光材料与器件；2、微纳尺度GaN基发光器件；3、半导体生物传感器；4、GaN基太赫兹器件
科研项目
近年主持与参加的科研项目：
1、国家自然科学基金国际(地区)合作与交流项目NSFC-FDCT(内地-澳门）：下一代集成式生物光电极探针的研发（主持）
2、广东省重点领域研发计划-“第三代半导体材料与器件”专项项目：AlGaN/GaN基集成式全固态pH传感器微探针研制（主持）
3、广东省重点领域研发计划-“第三代半导体材料与器件”专项项目：GaN基THz器件研制及其在卫星遥感中的应用研究（参加）
4、国家自然科学基金面上项目：单颗独立工作的微纳尺度硅衬底GaN基发光器件研究（主持）
5、国家自然科学基金面上项目：硅衬底GaN基LED异质外延生长及器件制备中应力研究（主持）
6、国家重点研发计划项目：GaN基新型电力电子器件关键技术（参加）
7、国家重点研发计划项目：大失配、强极化第三代半导体材料体系外延生长动力学和载流子调控规律（参加）
代表性科研成果
综述论文： Baijun Zhang* and Yang Liu, “A review of GaN based optoelectronic devices on silicon substrate”, Chinese Science Bulletin, 59, Issue 12, pp 1251-1275 (2014)
书籍章节： Handbook of Solid-State Lighting and LEDs (Chapter 19, III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers), CRC press, Taylor & Francis Group, 2017
(26) Yuebo Liu, Honghui Liu, Junyu Shen, Wanqing Yao, Fengge Wang, Yuan Ren, Minjie Zhang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Distribution of donor states on the surface of AlGaN/GaN heterostructures, Chinese Physics B, 30 (12), 128102 (2021)
(25) Yuebo Liu, Wanqing Yao, Jieying Xing, Honghui Liu, Yaqiong Dai, Longkun Yang, Fengge Wang, Yuan Ren, Junyu Shen, Minjie Zhang, Zhisheng Wu, Yang Liu and Baijun Zhang*, Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation, Chinese Physics B, 30 (11), 117302 (2021)
(24) Junyu Shen, Yanyan Xu, Zhengwen Xiao, Yuebo Liu, Honghui Liu, Fengge Wang, Wanqing Yao, Zhaokun Yan, Minjie Zhang, Zhisheng Wu, Yang Liu, Sio Hang Pun, Tim C. Lei, Mang I Vai, Peng Un Mak, Changhao Chen, Baijun Zhang*, Influence of surface material and illumination upon the performance of microelectrode/electrolyte interface in optogenetics, Micromachines, 12(9), 1061(2021)
(23) Yuebo Liu, Honghui Liu, Hang Yang, Wanqing Yao, Fengge Wang, Yuan Ren, Junyu Shen, Minjie Zhang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111), Advances in Condensed Matter Physics, Vol. 2021, 9990673, (2021)
(22) Yuebo Liu, Wanqing Yao, Honghui Liu, Longkun Yang, Shangfeng Liu, Liuyun Yang, Fengge Wang, Yuan Ren, Junyu Shen, Minjie Zhang, Zhisheng Wu, Yang Liu, Qi Wang, Xinqiang Wang, Baijun Zhang*, Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole, Materials Science in Semiconductor Processing, 133, 105934, (2021)
(21) Yuan Ren, Liuan Li, Ningyang Liu, Kang Zhang, Chengguo Li, Zhitao Chen*, Baijun Zhang*, Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing, Vacuum 182, 109784 (2020)
(20) Longkun Yang, Wanqing Yao, Yuebo Liu, Linglong Wang, Yaqiong Dai, Honghui Liu, Fengge Wang, Yuan Ren, Zhisheng Wu, Yang Liu and Baijun Zhang*, Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with half through-hole, AIP Advances 10 (4), 045219 (2020)
(19) Yaqiong Dai, Jieying Xing, Dejia Huang,Yuan Ren, Yuebo Liu, ZhishengWu, Yang Liu, Sio Hang Pun, Tim C. Lei, Mang I Vai, Chang Hao Chen, and Baijun Zhang*, AlGaN/GaN based all-solid-state pH sensor for micro-liter solution measurements, International Journal of Biotechnology & Bioengineering(IJBB), vol.6 (2), pp. 44-49 (2020)
(18) Yaqiong Dai, Jieying Xing, Longkun Yang, Yaohui Wen, Linglong Wang, Wanqing Yao, Xiaobiao Han, Yuan Ren, Yuebo Liu, Zhisheng Wu, Yang Liu and Baijun Zhang*, Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor, AIP Advances 9 (9), 095066 (2019)
(17) Xiaobiao Han, Yuebo Liu, Yuan Ren, Jieying Xing, Tongtong Zhu, Zhisheng Wu, Yang Liu, Baijun Zhang*, Semipolar {112̅ 2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates，Materials Science in Semiconductor Processing, 91, 327–332, (2019)
(16) Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors, J. Appl. Phys. 124, 034904 (2018)
(15) Xiaobiao Han, Hui Luo, Hang Yang, Jie Chen, Changming Zhong, Jiezhi Liang, Jieying Xing, Zhisheng Wu, Yang Liu* and Baijun Zhang*, Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates, Materials Science in Semiconductor Processing, 87, 181–186, (2018)
(14) Jieying Xing, Yinsong Chen, Yuebo Liu, Jiezhi Liang, Jie Chen, Yuan Ren, Xiaobiao Han, Changming Zhong, Hang Yang, Dejia Huang, Yaqian Hou, Zhisheng Wu, Yang Liu and Baijun Zhang*, Enhancement of Emission of InGaN/GaN Multiple-Quantum-Well Nanorods by Coupling to Au-Nanoparticle Plasmons, J. Appl. Phys. 123, 193101 (2018)
(13) Jie Chen, Xiaobiao Han, Puman Huang, Weijie Chen, Jiezhi Liang, Changming Zhong, Zhengzhou Pan, Zhisheng Wub, Yang Liu, Baijun Zhang*, Schottky performance variation on r-plane and c-plane of GaN micro, truncated-pyramid grown by selective area MOCVD, Materials Science in Semiconductor Processing 63, 248–252 (2017)
(12) Jie Chen, Pu-Man Huang, Xiao-Biao Han,Zheng-Zhou Pan, Chang-Ming Zhong, Jie-Zhi Liang,Zhi-Sheng Wu, Yang Liu* and Baijun Zhang*, Influence of adatom migration on wrinkling morphologies ofAlGaN/GaN micro-pyramids grown by selective MOVPE, Chinese Physics B26, 068101 (2017).
(11) Qiang Liao, Yibin Yang, Weijie Chen, Xiaobiao Han, Jie Chen, Wenjie Zang, Hui Luo, Jiali Lin, Yunling Qiu, Yinsong Chen, Jingting Wei, Zhisheng Wu, Iatneng Chan, Yang Liu*, and Baijun Zhang*, Fabrication and properties of thin-film InGaN/GaN multiple quantum well light-emitting diodes transferred from Si (111) substrate onto a thin epoxy resin carrier, Journal of Display Technology Vol. 12 (12), pp. 1602-1608 (2016).
(10) Jingting Wei, Baijun Zhang and Gang Wang, Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate, Chinese Journal of Electronics, Vol.25, No.4, pp672-677 (2016)
(9) Weijie Chen, Jiali Lin, Yinsong Chen, Xiaobiao Han, Jie Chen, Qiang Liao, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, Dual-color InGaN/GaN Pyramidal Micro Light-emitting Diode Selectively Grown on SiO2 Masked Si Substrate, Journal of Display Technology, Vol. 12(4), pp 412-416, (2016)
(8) Weijie Chen, Xiaobiao Han, Jiali Lin, Guoheng Hu, Minggang Liu, Yibin Yang, Jie Chen, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Migration characterizations of Ga and In adatoms on dielectric surface in selective MOVPE, Chinese Physics B, Vol. 24 (11), 118101 (2015)
(7) Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Jie Chen, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Yinsong Chen, Yunling Qiu, Zhisheng Wu, Yang Liu*, and Baijun Zhang*, In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in MOCVD system, Chinese Physics B. Vol. 24 (9), 096103 (2015)
(6) Weijie Chen, Jiali Lin, Guoheng Hu, Xiaobiao Han, Minggang Liu, Yibin Yang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid, J. Crys. Growth 426, pp. 168-172 (2015)
(5) Yibin Yang, Yuan Ren, Yangxiang Chen, Minggang Liu, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Qiang Liao, Wenjie Zang, Hui Luo, Jiali Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening, Microelectronic Engineering (MEE), 139, pp. 39-42 (2015)
(4) Minggang Liu, Yibin Yang, Peng Xiang, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Zhisheng Wu, Yang Liu and Baijun Zhang*, Influences of Stress on the Properties of GaN/InGaN Multiple Quantum Wells LEDs Grown on Si (111) Substrate, Chinese Physics B. Vol. 24 (6), 068503 (2015)
(3) Weijie Chen, Guoheng Hu, Jianliang Jiang, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, Electrically Driven Single Pyramid InGaN/GaN Micro Light-emitting Diode Grown on Silicon Substrate, Journal of Display Technology, Vol. 11 (3), March, pp. 285-291 (2015)
(2) Weijie Chen, Guoheng Hu, Jiali Lin, Jianliang Jiang, Minggang Liu, Yibin Yang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, High-performance single pyramid micro light-emitting diode with leakage current confined layer, Applied Physics Express 8, 032102 (2015)
(1) Minggang Liu, Yunqian Wang, Yibin Yang, Xiuqi Lin, Peng Xiang, Weijie Chen, Xiaobiao Han, Wenjie Zang, Qiang Liao, Jiali Lin, Hui Luo, Zhisheng Wu, Yang Liu, Baijun Zhang*, Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes, Chinese Physics B. Vol. 24 (3), 038503 (2015)